Search OEDI Data
Showing results 1 - 2 of 2.
Show
results per page.
Order by:
Available Now:
Research Areas
Accessibility
Data Type
Organization
Source
SiC Diode Test Data
Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.
Gilbert, G. Sandia National Laboratories
Aug 01, 2014
1 Resources
0 Stars
Publicly accessible
1 Resources
0 Stars
Publicly accessible
EGS Collab: Hydraulic Fracturing Test Measurements on the 4100L of SURF
This package includes data from two days of testing at the Sanford Underground Research Facility (SURF) on the 4100 level. The tests were performed in borehole TV4100 in the battery charging alcove south of the Yates shaft. TV4100 is a vertical borehole ~50 meters deep. A series o...
Ingraham, M. et al Sandia National Laboratories
Aug 15, 2019
3 Resources
0 Stars
Publicly accessible
3 Resources
0 Stars
Publicly accessible