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SiC Diode Test Data

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Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.

SiC Diode Test Data.xlsx

Excel Spreadsheet containing data from SiC diode test (IV curves)
174

Citation Formats

TY - DATA AB - Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C. AU - Gilbert, Gregorz DB - Open Energy Data Initiative (OEDI) DP - Open EI | National Renewable Energy Laboratory DO - 10.15121/1157514 KW - geothermal KW - SiC KW - diode KW - test KW - high temp KW - egs LA - English DA - 2014/08/01 PY - 2014 PB - Sandia National Laboratories T1 - SiC Diode Test Data UR - https://doi.org/10.15121/1157514 ER -
Export Citation to RIS
Gilbert, Gregorz. SiC Diode Test Data. Sandia National Laboratories, 1 August, 2014, GDR. https://doi.org/10.15121/1157514.
Gilbert, G. (2014). SiC Diode Test Data. [Data set]. GDR. Sandia National Laboratories. https://doi.org/10.15121/1157514
Gilbert, Gregorz. SiC Diode Test Data. Sandia National Laboratories, August, 1, 2014. Distributed by GDR. https://doi.org/10.15121/1157514
@misc{OEDI_Dataset_6752, title = {SiC Diode Test Data}, author = {Gilbert, Gregorz}, abstractNote = {Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.}, url = {https://gdr.openei.org/submissions/441}, year = {2014}, howpublished = {GDR, Sandia National Laboratories, https://doi.org/10.15121/1157514}, note = {Accessed: 2025-07-20}, doi = {10.15121/1157514} }
https://dx.doi.org/10.15121/1157514

Details

Data from Aug 1, 2014

Last updated Aug 8, 2017

Submitted Sep 2, 2014

Organization

Sandia National Laboratories

Contact

Gregorz Gilbert Cieslewski

ggciesl@sandia.gov

Authors

Gregorz Gilbert

Sandia National Laboratories

Research Areas

DOE Project Details

Project Lead Lauren Boyd

Project Number FY14 AOP 1.1.5.1

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