SiC Diode High Temperature Test Data
DOI
10.15121/1157514
Publicly accessible
License
Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.
Citation Formats
TY - DATA
AB - Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.
AU - Gilbert, Gregorz
DB - Open Energy Data Initiative (OEDI)
DP - Open EI | National Laboratory of the Rockies
DO - 10.15121/1157514
KW - geothermal
KW - SiC
KW - diode
KW - test
KW - high temp
KW - egs
LA - English
DA - 2014/08/01
PY - 2014
PB - Sandia National Laboratories
T1 - SiC Diode High Temperature Test Data
UR - https://doi.org/10.15121/1157514
ER -
Gilbert, Gregorz. SiC Diode High Temperature Test Data. Sandia National Laboratories, 1 August, 2014, GDR. https://doi.org/10.15121/1157514.
Gilbert, G. (2014). SiC Diode High Temperature Test Data. [Data set]. GDR. Sandia National Laboratories. https://doi.org/10.15121/1157514
Gilbert, Gregorz. SiC Diode High Temperature Test Data. Sandia National Laboratories, August, 1, 2014. Distributed by GDR. https://doi.org/10.15121/1157514
@misc{OEDI_Dataset_6752,
title = {SiC Diode High Temperature Test Data},
author = {Gilbert, Gregorz},
abstractNote = {Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.},
url = {https://gdr.openei.org/submissions/441},
year = {2014},
howpublished = {GDR, Sandia National Laboratories, https://doi.org/10.15121/1157514},
note = {Accessed: 2026-07-31},
doi = {10.15121/1157514}
}
https://dx.doi.org/10.15121/1157514
Details
Data from Aug 1, 2014
Last updated Jul 17, 2026
Submitted Sep 2, 2014
Organization
Sandia National Laboratories
Contact
Gregorz Gilbert Cieslewski
Authors
Original Source
https://gdr.openei.org/submissions/441Research Areas
DOE Project Details
Project Lead Lauren Boyd
Project Number FY14 AOP 1.1.5.1
