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Data for "High dopant activation in arsenic doped single-crystal CdTe thin films: Insights from MBE growth and rapid thermal processing"

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Data for publication "High dopant activation in arsenic doped single-crystal CdTe thin films: Insights from MBE growth and rapid thermal processing" by Hongling Lott, Andrea T. Mathew, Matt R. Young, Alexander Goldstone, Anthony Rice, Matthew O. Reese, and Eric Colegrove for publication in APL Materials.

Data and plot for Figure 5 – Hall carrier concentration (a) and (b), and activation (c) and (d) vs RTP Temperature

Data and plot for Figure 5 ? Hall carrier concentration (a) and (b), and activation (c) and (d) vs RTP Temperature

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Figure 2 – SIMS depth profile and associated deposition conditions for “staircase” structures.

Figure 2 ? SIMS depth profile and associated deposition conditions for ?staircase? structures.

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Figure 3 – As incorporation vs growth conditions.

Figure 3 ? As incorporation vs growth conditions.

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Figure 4 – Representative SIMS depth profiles of As for two different growth conditions.

Figure 4 ? Representative SIMS depth profiles of As for two different growth conditions.

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Figure 4 – Representative SIMS depth profiles of As for two different growth conditions. Insets: X-ray diffraction (XRD) ω-rocking curves of the CdTe(422) reflection from each as deposited sample, indicating the crystalline quality. The full width at half maximum (FWHM) was 96″ for the Cd-overpressure sample and 89″ for the no-Cd-overpressure sample.

Figure 4 ? Representative SIMS depth profiles of As for two different growth conditions. Insets: X-ray diffraction (XRD) ?-rocking curves of the CdTe(422) reflection... more

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Figure S1 -- SIMS measurements of As concentration for different post processing temperatures for different growth conditions.

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Figure S2 -- Charge carrier mobility vs RTP temperature for samples shown in Figure 5.

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SIMS profiles of samples used in the paper. With and without Cd overpressure and rapid thermal processing at different temperatures (labeled). Data were used for Figure S1 and Figure 4.

SIMS profiles of samples used in the paper. With and without Cd overpressure and rapid thermal processing at different temperatures (labeled). Data were used for Figure... more

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Staircase raw data for figure 2 and figure 3

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Citation Formats

TY  - DATA
AB  - Data for publication "High dopant activation in arsenic doped single-crystal CdTe thin films: Insights from MBE growth and rapid thermal processing" by Hongling Lott, Andrea T. Mathew, Matt R. Young, Alexander Goldstone, Anthony Rice, Matthew O. Reese, and Eric Colegrove for publication in APL Materials. 
AU  - Lott
A2  - Mathew
A3  - Young
A4  - Goldstone
A5  - Rice
A6  - Reese
A7  - Colegrove
DB  - Open Energy Data Initiative (OEDI)
DP  - Open EI | National Renewable Energy Laboratory
DO  - 
KW  - CdTe
KW  - photovoltaics
KW  - molecular beam epitaxy
KW  - Group-V doping
KW  - Single Crystal
KW  - Thin film
LA  - English
DA  - 2025/07/18
PY  - 2025
PB  - National Renewable Energy Laboratory
T1  - Data for "High dopant activation in arsenic doped single-crystal CdTe thin films: Insights from MBE growth and rapid thermal processing"
UR  - https://data.openei.org/submissions/8458
ER  -

Export Citation to RIS

Lott, et al. Data for "High dopant activation in arsenic doped single-crystal CdTe thin films: Insights from MBE growth and rapid thermal processing". National Renewable Energy Laboratory, 18 July, 2025, NREL. https://data.nrel.gov/submissions/293.

Lott, Mathew, Young, Goldstone, Rice, Reese, & Colegrove. (2025). Data for "High dopant activation in arsenic doped single-crystal CdTe thin films: Insights from MBE growth and rapid thermal processing". [Data set]. NREL. National Renewable Energy Laboratory. https://data.nrel.gov/submissions/293

Lott, Mathew, Young, Goldstone, Rice, Reese, and Colegrove. Data for "High dopant activation in arsenic doped single-crystal CdTe thin films: Insights from MBE growth and rapid thermal processing". National Renewable Energy Laboratory, July, 18, 2025.  Distributed by NREL. https://data.nrel.gov/submissions/293

@misc{OEDI_Dataset_8458,
title = {Data for "High dopant activation in arsenic doped single-crystal CdTe thin films: Insights from MBE growth and rapid thermal processing"},
author = {Lott and Mathew and Young and Goldstone and Rice and Reese and Colegrove},
abstractNote = {Data for publication "High dopant activation in arsenic doped single-crystal CdTe thin films: Insights from MBE growth and rapid thermal processing" by Hongling Lott, Andrea T. Mathew, Matt R. Young, Alexander Goldstone, Anthony Rice, Matthew O. Reese, and Eric Colegrove for publication in APL Materials.\ },
url = {https://data.nrel.gov/submissions/293},
year = {2025},
howpublished = {NREL, National Renewable Energy Laboratory, https://data.nrel.gov/submissions/293},
note = {Accessed: 2025-07-19}
}

Details

Data from Jul 18, 2025

Last updated Jul 18, 2025

Submitted Jul 18, 2025