SiC Diode Test Data
DOI
10.15121/1157514
Publicly accessible
License
Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.
Citation Formats
Sandia National Laboratories. (2014). SiC Diode Test Data [data set]. Retrieved from https://dx.doi.org/10.15121/1157514.
Gilbert, Gregorz. SiC Diode Test Data. United States: N.p., 01 Aug, 2014. Web. doi: 10.15121/1157514.
Gilbert, Gregorz. SiC Diode Test Data. United States. https://dx.doi.org/10.15121/1157514
Gilbert, Gregorz. 2014. "SiC Diode Test Data". United States. https://dx.doi.org/10.15121/1157514. https://gdr.openei.org/submissions/441.
@div{oedi_3257, title = {SiC Diode Test Data}, author = {Gilbert, Gregorz.}, abstractNote = {Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.}, doi = {10.15121/1157514}, url = {https://gdr.openei.org/submissions/441}, journal = {}, number = , volume = , place = {United States}, year = {2014}, month = {08}}
https://dx.doi.org/10.15121/1157514
Details
Data from Aug 1, 2014
Last updated Aug 8, 2017
Submitted Sep 2, 2014
Organization
Sandia National Laboratories
Contact
Gregorz Gilbert Cieslewski
Authors
Original Source
https://gdr.openei.org/submissions/441Research Areas
DOE Project Details
Project Lead Lauren Boyd
Project Number FY14 AOP 1.1.5.1
